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PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode
Symbol VDSS VDGR VDSS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25 C to 175 C TJ = 25 C to 175 C; RGS = 1 M Continuous Transient TC = 25 C External lead current limit
IXFH 120N15P IXFT 120N15P
VDSS ID25
RDS(on) trr
= =
150 V 120 A 16 m 200 ns
Maximum Ratings 150 150 20 30 120 75 260 60 60 2.0 10 600 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J
TO-247 (IXFH)
G
D (TAB) D S
TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 4 TC = 25 C
TO-268 (IXFT)
G
V/ns W C C C C C
S D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Plastic case for 10 s Mounting torque TO-247 TO-268 (TO-3P)
300 260
Features
l l
1.13/10 Nm/lb.in. 6.0 5.0 g g
l
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175 C
Characteristic Values Min. Typ. Max. 150 3.0 5.0 100 25 500 16 V V nA A A m
Advantages
l l l
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2006 IXYS All rights reserved
DS99210E(12/05)
IXFH 120N15P IXFT 120N15P
Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 40 60 4900 VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 330 33 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 4 (External) 42 85 26 150 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 40 80 S pF pF pF ns ns ns ns nC nC nC 0.25 C/W (TO-3P) 0.21 C/W
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
TO-247 (IXFH) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS= 10 V; ID = 0.5 ID25, pulse test
Dim.
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 120 260 1.5 A A V
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 (IXFT) Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A, -di/dt = 100 A/s VR = 100 V, VGS = 0 V 600 6
200 ns nC
Terminals: 1 - Gate 3 - Source
2 - Drain Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXFH 120N15P IXFT 120N15P
Fig. 1. Output Characteristics @ 25C
120 VGS = 10V 9V 280 VGS = 10V 240 200 9V
Fig. 2. Extended Output Characteristics @ 25C
100
I D - Amperes
I D - Amperes
80
8V
160 120 80 8V
60 40
7V
6V 20 5V 0 0 0.5 1 1.5 2 2.5 40 0 0 1 2 3 4 5 6 7 8
7V
6V 9 10
V D S - Volts Fig. 3. Output Characteristics @ 150C
120 VGS = 10V 9V 2.8 2.6 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
100
R D S ( o n ) - Normalized
8V
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 I D = 60A I D = 120A
I D - Amperes
80 7V 60 6V
40
20
5V
0 0 1
V D S - Volts
2
3
4
5
-50
-25
0
TJ - Degrees Centigrade
25
50
75
100
125
150
175
Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current
4 3.5 TJ = 175C 90 80 70 3 2.5 2 VGS = 15V 1.5 1 0.5 0 30 60 90 VGS = 10V
Fig. 6. Drain Current vs. Case Tem perature
External Lead Current Limit
R D S ( o n ) - Normalized
I D - Amperes
60 50 40 30 20
TJ = 25C 120 150 180 210 240 270 300
10 0
I D - Amperes
-50
-25
0
TC - Degrees Centigrade
25
50
75
100
125
150
175
(c) 2006 IXYS All rights reserved
IXFH 120N15P IXFT 120N15P
Fig. 7. Input Adm ittance
210 180 150 90 80 70
Fig. 8. Transconductance
120 90 60 30 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 TJ = 150C 25C -40C
g f s - Siemens
I D - Amperes
60 50 40 30 20 10 0 0 30 60 90 120 150 180 210 240 270 TJ = -40C 25C 150C
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
300 10 9 250 200 8 7 VDS = 75V I D = 60A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
6 5 4 3 2 1 0
150
100 50
0
V S D - Volts Fig. 11. Capacitance
10,000 1000
0
20
40
60
80
100
120
140
160
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
TJ = 175C
Capacitance - picoFarads
Ciss
R DS(on) Limit
TC = 25C
I D - Amperes
25s 100 1ms 10ms 100s
1,000
Coss
f = 1MHz
100 0 5 10 15 20 25 30
Crss
10
DC 40 10 100 1000
V DS - Volts
35
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 120N15P IXFT 120N15P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
1.00
R( t h ) J C - C / W
0.10
0.01 0.1 1 10 100 1000
Pu ls e W id th - m illis e c o n d s
(c) 2006 IXYS All rights reserved

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